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APT60M75JVFR
600V 62A 0.075
S G D S
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Faster Switching * Lower Leakage * Popular SOT-227 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* Avalanche Energy Rated * FAST RECOVERY BODY DIODE
G
D
S
All Ratings: TC = 25C unless otherwise specified.
APT60M75JVFR UNIT Volts Amps
600 62 248 30 40 700 5.6 -55 to 150 300 62 50
4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 62 0.075 250 1000 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 31A)
Ohms A
2-2006 050-7267 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT60M75JVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 62A @ 25C VGS = 15V VDD = 300V ID = 62A @ 25C RG = 0.6 MIN TYP MAX UNIT pF
16500 1900 750 700 80 330 20 20 80 12
19800 2660 1125 1050 120 495 40 40 120 24
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
62 248 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = - 62A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -62A, di/dt = 100A/s) Reverse Recovery Charge (IS = -62A, di/dt = 100A/s) Peak Recovery Current (IS = -62A, di/dt = 100A/s)
300 600 1.8 7.4 16 30
THERMAL/ PACKAGE CHARACTERISTICS
Symbol RJC RJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT C/W Volts
0.18 40 2500 10
lb*in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.87mH, R = 25, Peak I = 62A j G L 5 I I = 62A, di/ = 100A/s, T 150C, R = 2.0 V = 600V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
, THERMAL IMPEDANCE (C/W)
0.1 0.05
D=0.5 0.2 0.1
0.01 0.005
0.05 0.02 0.01 SINGLE PULSE Note:
PDM t1
2-2006
050-7267 Rev A
0.001 0.0005 10-5 10-4
t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
APT60M75JVFR
200
VGS=7V, 10V & 15V
200
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
6V
VGS=7V, 10V & 15V 6V
160
160
120
5.5V
120
5.5V
80
80
5V
40
5V
40
4.5V 4V 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
4.5V 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
200
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.20
V
GS
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
160
1.15
120
1.10
VGS=10V
80
TJ = +125C
1.05
VGS=20V
40
TJ = +25C
TJ = -55C
1.00
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 70
0
0.95
0
25 50 75 100 125 150 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
60 50 40 30 20 10 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
25
I
D
1.15
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
= 0.5 I V
GS
D
[Cont.]
= 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
1.1 1.0 0.9 0.8 0.7 0.6
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-7267 Rev A
2-2006
APT60M75JVFR
300
ID, DRAIN CURRENT (AMPERES)
10S
OPERATION HERE LIMITED BY RDS (ON)
60,000
100 50
100S
1mS
C, CAPACITANCE (pF)
Ciss 10,000 5,000
10 5
10mS 100mS DC
Coss
1 .5
TC =+25C TJ =+150C SINGLE PULSE
Crss
1,000 500
.1
1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
200 100 50
16
VDS=120V
VDS=300V
TJ =+150C
TJ =+25C
12
VDS=480V
8
10 5
4
250 500 750 1000 1250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
2-2006
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
38.0 (1.496) 38.2 (1.504)
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Gate
050-7267 Rev A
"UL Recognized" File No. E145592
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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